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| 30 4V 25 20 10V 4.5V 3.5V 30 25 20 Vds=5V Id (A) Id (A) 125C 15 10 5 0 25C 15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Vgs=3V 1 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1040 26 1.7 180 110 0.7 Id=8.5A Vgs=4.5V Vgs=10V Rds(on) (m:) 22 Vgs=4.5V Normalized On-Resistance 1.6 1.5 1.4 18 VGS=10V, VDS=15V, RL=1.8:, 1.3GEN=3: R 14 Vgs=10V 1.2 1.1 1 0.9 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature 10 0 5 10 15 20 25 30 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 Id=8.5A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) Is (A) 40 30 125C 20 10 2 4 25C 6 8 10 1.0E-02 1.0E-03 25C FET+SCHOTTKY 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics (Note 6) Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage 10 8 Vds=15V Id=8.5A 1500 1250 Ciss f=1MHz Vgs=0V Capacitance (pF) Vgs (Volts) 1000 750 500 Crss 250 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C, Ta=25C Rds(On) limited 10Ps 100Ps 10ms 0.1s 40 1040 180 110 0.7 30 Tj(max)=150C Ta=25C Power (W) 10.0 1ms Id (A) 20 1.0 VGS=10V, VDS=15V, RL=1.8:, RGEN=3: 1s 10s DC 10 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 10V 25 20 3.5V 20 16 4.5V 3V 12 8 Vds=5V Id (A) 15 10 Vgs=2.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Id (A) 4 0 0 0.5 1 1.5 125C 25C 2 2.5 3 3.5 Vgs (Volts) Figure 2: Transfer Characteristics 30 1.8 Normalized On-Resistance 28 Id=7A 1.6 Vgs=4.5V 1.4 1.2 1 0.8 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature Vgs=10V Rds(on) (m:) 26 24 22 Vgs=4.5V Vgs=10V 20 18 16 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 60 Id=7A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) Is (A) 125C 50 40 30 25C 20 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=15V Id=7A 750 Ciss f=1MHz Vgs=0V Capacitance (pF) Vgs (Volts) 500 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 250 Crss 0 0 5 Coss 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C, Ta=25C Rds(on) limited 100Ps 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100 40 Tj(max)=150C Ta=25C 10Ps 30 Power (W) 10.0 Id (A) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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